Product Summary

The MRF9030 is an N-Channel Enhancement-Mode Lateral MOSFET. Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of the device make the MRF9030 ideal for large–signal, common–source amplifier applications in 26 volt base station equipment.

Parametrics

MRF9030 absolute maximum ratings: (1)Drain–Source Voltage VDSS: 68 Vdc; (2)Gate–Source Voltage VGS: –0.5, +15 Vdc; (3)Total Device Dissipation, PD: 92Watts; (4)Storage Temperature Range Tstg: –65 to +200℃; (5)Operating Junction Temperature TJ: 200℃.

Features

MRF9030 features: (1)Typical Two–Tone Performance at 945 MHz, 26 Volts Output Power: 30 Watts PEP; Power Gain: 19 dB; Efficiency: 41.5%; IMD: –32.5 dBc; (2)Integrated ESD Protection; (3)Designed for Maximum Gain and Insertion Phase Flatness; (4)Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power; (5)Excellent Thermal Stability; (6)Characterized with Series Equivalent Large–Signal Impedance Parameters; (7)In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

Diagrams

MRF9030 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF9030
MRF9030
Other

Data Sheet
Negotiable 
MRF9030GNR1
MRF9030GNR1
Freescale Semiconductor
Transistors RF MOSFET Power 30W RF PWR FET
Data Sheet
Negotiable 
MRF9030LR1
MRF9030LR1
Freescale Semiconductor
Transistors RF MOSFET Power 30W RF PWR FET NI-360L
Data Sheet
0-357: $20.66
357-500: $19.61
MRF9030LR5
MRF9030LR5
Freescale Semiconductor
Transistors RF MOSFET Power 30W RF PWR FET NI-360L
Data Sheet
Negotiable 
MRF9030LSR1
MRF9030LSR1

IC MOSFET RF N-CHAN NI-360S
Data Sheet
Negotiable 
MRF9030LSR5
MRF9030LSR5

IC MOSFET RF N-CHAN NI-360S
Data Sheet
Negotiable 
MRF9030NBR1
MRF9030NBR1

IC MOSFET RF N-CHAN TO272-2
Data Sheet
Negotiable 
MRF9030NR1
MRF9030NR1
Freescale Semiconductor
Transistors RF MOSFET Power 30W RF PWR FET TO-270N
Data Sheet
0-346: $11.60
346-500: $11.04